| CPC H03K 19/18 (2013.01) [H01F 10/3272 (2013.01); H10N 50/80 (2023.02)] | 20 Claims |
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1. A method, including:
providing a substrate;
disposing a plurality of synthetic antiferromagnet (SAF) nanotracks along a first axis, with at least a first input nanotrack, a second input nanotrack, and a third input nanotrack over the substrate, the second input nanotrack disposed between the first input nanotrack and the third input nanotrack, each of the first input nanotrack, the second input nanotrack and the third input nanotrack further having a first end and a second end;
at least one connector nanotrack selectively disposed about the second end, connecting the first input nanotrack, the second input nanotrack and the third input nanotrack; each first input nanotrack, second input nanotrack, third nanotrack and the connector nanotrack having a top ferromagnetic layer, a bottom ferromagnetic layer and a spacer layer disposed between the top ferromagnetic layer and the bottom ferromagnetic layer, and further, the bottom ferromagnetic layer disposed over the substrate;
disposing an output nanotrack coupled to the connector nanotrack opposite the second end of the second input nanotrack, the output nanotrack maintained at a ground potential; selectively defining an input value at the first end of the first input nanotrack, the second input nanotrack and the third input nanotrack by selectively nucleating a SAF skyrmion at the first end of one or more of the first input nanotrack, the second input nanotrack and the third input nanotrack,
wherein presence of the SAF skyrmion indicative of a first value and absence of the SAF skyrmion indictive of a second value;
selectively passing a charge current through the substrate to selectively move the nucleated SAF skyrmion towards the connector nanotrack, charge current passed along the first axis;
sensing the presence of the SAF skyrmion about the output nanotrack; and
concluding an output value as the first value when the presence of the SAF skyrmion is sensed.
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