US 12,218,655 B2
Wide voltage gate driver using low gate oxide transistors
Ahmed Essam Hashim, Gilbert, AZ (US); Karthikeyan Kandaswamy, Chandler, AZ (US); and Abhishek Badarinath, Tempe, AZ (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Mar. 24, 2023, as Appl. No. 18/126,080.
Application 18/126,080 is a continuation of application No. 17/538,953, filed on Nov. 30, 2021, granted, now 11,641,198.
Prior Publication US 2023/0246640 A1, Aug. 3, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03K 3/00 (2006.01); H03K 5/08 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01)
CPC H03K 17/102 (2013.01) 20 Claims
OG exemplary drawing
 
1. A circuit, comprising:
a first transistor including:
a first control input;
a first current terminal;
a second current terminal; and
a first voltage terminal coupled to the first current terminal;
a second transistor including:
a second control input;
a third current terminal coupled to an output terminal with the second current terminal;
a fourth current terminal; and
a second voltage terminal coupled to the fourth current terminal;
a first voltage clamp coupled between the first voltage terminal and the first control input;
a second voltage clamp coupled between the second control input and the second voltage terminal;
a first current path coupled between the first control input and the second voltage terminal including a third transistor sized larger than the first transistor;
a second current path coupled between the first control input and the second voltage terminal including a fourth transistor sized smaller than the third transistor; and
control logic coupled to the first current path and the second current path.