US 12,218,585 B2
Charge pump system with low ripple output voltage
Chung-Cheng Chou, Hsin-Chu (TW); and Tien-Yen Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 4, 2023, as Appl. No. 18/230,450.
Application 17/737,207 is a division of application No. 16/657,221, filed on Oct. 18, 2019, granted, now 11,336,174, issued on May 17, 2022.
Application 18/230,450 is a continuation of application No. 17/737,207, filed on May 5, 2022, granted, now 11,757,356.
Prior Publication US 2023/0396161 A1, Dec. 7, 2023
Int. Cl. H02M 3/07 (2006.01); G11C 5/14 (2006.01); G11C 13/00 (2006.01)
CPC H02M 3/07 (2013.01) [G11C 5/145 (2013.01); G11C 13/0038 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a charge pump system having a plurality of enable signal input terminals and an output terminal, the charge pump system configured to provide an output voltage at the output terminal; and
a detection circuit connected to the enable signal input terminals and the output terminal of the charge pump system, and including a plurality of voltage detection inputs connected to a plurality of NMOS transistors, wherein:
a source terminal of each NMOS transistor of the plurality of NMOS transistors is configured to connect to a drain terminal of a current mirror NMOS transistor that is part of a current mirror configuration; and
the detection circuit is configured to compare the output voltage of the charge pump system to a plurality of predefined input detection voltage levels received at the plurality of voltage detection inputs, and to selectively output a plurality of enable signals to the charge pump system enable signal input terminals in response to the comparison.