CPC H02M 1/32 (2013.01) [G05F 3/262 (2013.01); H02M 1/0009 (2021.05); H02M 1/08 (2013.01); H02M 3/158 (2013.01); H02M 1/0006 (2021.05)] | 7 Claims |
1. A semiconductor device comprising:
a constant current generating circuit unit;
a first current mirror circuit unit having as an input current a constant current outputted by the constant current generating circuit unit, and generating a first mirror current as a mirror current;
a level shift current unit including a clamp transistor between whose drain and source the first mirror current flows and to whose base a power supply voltage of the constant current generating circuit unit is applied, and a transistor that is connected in series to the clamp transistor and through which the first mirror current flows;
a second current mirror circuit unit having as an input stage the transistor and having as an output stage a transistor through which a second mirror current obtained by replicating the first mirror current flows; and
an error absorption circuit unit having a capacitance corresponding to a parasitic capacitance of the clamp transistor connected to a terminal for outputting the second mirror current of the output-stage transistor in the second current mirror circuit unit.
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