US 12,218,578 B2
Power electronics system, method for fabricating a power electronics system and method for protecting a half bridge circuit from an overload or overcurrent
Tomas Reiter, Ottobrunn (DE); and Dietmar Spitzer, Völkernarkt (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Dec. 28, 2022, as Appl. No. 18/090,096.
Claims priority of application No. 102022100034.6 (DE), filed on Jan. 3, 2022.
Prior Publication US 2023/0412066 A1, Dec. 21, 2023
Int. Cl. H02M 1/32 (2007.01); H02M 7/00 (2006.01); H02M 7/5387 (2007.01)
CPC H02M 1/32 (2013.01) [H02M 7/003 (2013.01); H02M 7/5387 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A power electronics system, comprising:
a power semiconductor module with a first side, an opposite second side, and lateral sides connecting the first and second sides, the power semiconductor module comprising:
at least one power semiconductor die forming at least one part of a half bridge circuit;
a first encapsulation encapsulating the at least one power semiconductor die; and
at least one external contact configured as a direct current contact of the half bridge circuit, wherein the external contact is exposed from the first encapsulation at a lateral side of the power semiconductor module;
a driver module arranged over the first side of the power semiconductor module and being configured to control the half bridge circuit; and
a differential Hall sensor arranged over the external contact and being configured to detect a direct current flowing through the external contact,
wherein the driver module is configured to modify a control pattern of the half bridge circuit based on a direct current value detected by the differential Hall sensor.