US 12,218,488 B2
Light emitting apparatus and projector
Yasuto Akatsuka, Chino (JP); and Katsumi Kishino, Akiruno (JP)
Assigned to SEIKO EPSON CORPORATION, Tokyo (JP); and SOPHIA SCHOOL CORPORATION, Tokyo (JP)
Filed by SEIKO EPSON CORPORATION, Tokyo (JP); and SOPHIA SCHOOL CORPORATION, Tokyo (JP)
Filed on Nov. 18, 2021, as Appl. No. 17/530,431.
Claims priority of application No. 2020-193169 (JP), filed on Nov. 20, 2020.
Prior Publication US 2022/0166194 A1, May 26, 2022
Int. Cl. H01S 5/323 (2006.01); G03B 21/20 (2006.01)
CPC H01S 5/323 (2013.01) [G03B 21/2033 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A light emitting apparatus comprising:
a laminate including a columnar section,
wherein the columnar section includes
an n-type semiconductor layer,
a first p-type semiconductor layer,
a light emitting layer provided between the n-type semiconductor layer and the first p-type semiconductor layer, and
a second p-type semiconductor layer in contact with the first p-type semiconductor layer,
the first p-type semiconductor layer is provided between the light emitting layer and the second p-type semiconductor layer,
the first p-type semiconductor layer has a c-plane and a facet surface,
the second p-type semiconductor layer has
a c-plane region provided at the c-plane, and
a facet-surface region provided at the facet surface,
the c-plane region has negatively polarized charges at an interface with the first p-type semiconductor layer, and
the facet-surface region has positively polarized charges at the interface,
wherein the light emitting layer is an InGaN layer, and
an InN molar fraction of In in the second p-type semiconductor layer is lower than an InN molar fraction of In in the light emitting layer.