US 12,218,487 B2
Device for generating laser radiation
Goetz Erbert, Lobau (DE); Hans Wenzel, Berlin (DE); Steffen Knigge, Konigs Wusterhausen (DE); Christian Dominik Martin, Berlin (DE); Andre Maassdorf, Berlin (DE); Pietro Della Casa, Berlin (DE); Andrea Knigge, Konigs Wusterhausen (DE); and Paul Crump, Berlin (DE)
Assigned to FERDINAND-BRAUN-INSTITUT GGMBH, LEIBNIZ-INSTITUT FÜR HÖCHSTFREQUENZTECHNIK, Berlin (DE)
Appl. No. 17/426,846
Filed by FERDINAND-BRAUN-INSTITUT GGMBH, LEIBNIZ-INSTITUT FÜR HÖCHSTFREQUENZTECHNIK, Berlin (DE)
PCT Filed Jan. 9, 2020, PCT No. PCT/EP2020/050462
§ 371(c)(1), (2) Date Jul. 29, 2021,
PCT Pub. No. WO2020/156775, PCT Pub. Date Aug. 6, 2020.
Claims priority of application No. 102019102499.4 (DE), filed on Jan. 31, 2019.
Prior Publication US 2022/0115835 A1, Apr. 14, 2022
Int. Cl. H01S 5/22 (2006.01); H01S 5/10 (2021.01); H01S 5/40 (2006.01)
CPC H01S 5/2205 (2013.01) [H01S 5/1064 (2013.01); H01S 5/2206 (2013.01); H01S 5/4043 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A diode laser having a layer structure, the layer structure comprising:
first n-type functional layers;
a metal n-contact;
an active layer which is configured for generating electromagnetic radiation and which is arranged on the first functional layers;
second p-type functional layers which are arranged on the active layer, wherein the second functional layers comprise first p-type layers and second p-type layers, wherein the first p-type layers comprise a p-type waveguide layer and a p-type cladding layer, and the second p-type layers comprise a p-type contact layer;
a metal p-contact;
a current barrier which is introduced between the first p-type layers and the second p-type layers; and
at least one facet for coupling out electromagnetic radiation along a first axis,
wherein the first functional layers, the active layer and the second functional layers are stacked along a second axis,
wherein the current barrier extends along a third axis,
wherein the current barrier has at least one opening, and
wherein a first width of the opening of the current barrier along the third axis is smaller than a second width of the metal p-contact along the third axis, and a projection of the first width onto the metal p-contact lies within the second width;
wherein the current barrier is formed by the introduction of impurity atoms into the first p-type layers by implantation or diffusion;
wherein a specific electrical resistance of the current barrier is more than double the amount of a specific electrical resistance of the layer structure, and
wherein the thickness of the first p-type layers is less than 2 μm and the thickness of the second p-type layers is greater than 0.5 μm.