US 12,218,486 B2
Vertical cavity surface emitting device
Masaru Kuramoto, Tokyo (JP); and Seiichiro Kobayashi, Tokyo (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Appl. No. 17/285,635
Filed by STANLEY ELECTRIC CO., LTD., Tokyo (JP)
PCT Filed Oct. 7, 2019, PCT No. PCT/JP2019/039456
§ 371(c)(1), (2) Date Apr. 15, 2021,
PCT Pub. No. WO2020/080161, PCT Pub. Date Apr. 23, 2020.
Claims priority of application No. 2018-196394 (JP), filed on Oct. 18, 2018.
Prior Publication US 2021/0384706 A1, Dec. 9, 2021
Int. Cl. H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2021.01); H01S 5/343 (2006.01)
CPC H01S 5/18361 (2013.01) [H01S 5/04253 (2019.08); H01S 5/1071 (2013.01); H01S 5/34333 (2013.01); H01S 5/34346 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting device comprising:
a substrate;
a first multilayer film reflecting mirror formed on the substrate;
a first semiconductor layer formed on the first multilayer film reflecting mirror and having a first conductivity type;
a light-emitting layer formed on the first semiconductor layer;
a second semiconductor layer formed on the light-emitting layer and having a second conductivity type opposite to the first conductivity type of the first semiconductor layer, the second semiconductor layer including a low resistance region and a high resistance region on an upper surface thereof, the high resistance region being depressed from the low resistance region toward the light-emitting layer outside the low resistance region, and impurities of the second conductivity type being inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region;
a light-transmitting electrode layer in contact with the low resistance region and the high resistance region, the light-transmitting electrode layer being formed on the upper surface of the second semiconductor layer; and
a second multilayer film reflecting mirror formed on the light-transmitting electrode layer,
wherein:
a resonator is constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror,
the second semiconductor layer includes another high resistance region,
the another high resistance region is depressed from the low resistance region toward the light-emitting layer inside the low resistance region on the upper surface, and
impurities of the second conductivity type are inactivated in the another high resistance region such that the another high resistance region has an electrical resistance higher than the electrical resistance of the low resistance region.