| CPC H01S 5/026 (2013.01) [H01S 5/0265 (2013.01); H01S 5/12 (2013.01); H01S 5/1215 (2013.01); H01S 5/1221 (2013.01); H01S 5/227 (2013.01); H01S 5/3211 (2013.01); H01S 5/50 (2013.01); H01S 5/0287 (2013.01); H01S 5/1064 (2013.01)] | 20 Claims |

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1. A semiconductor optical amplifier integrated laser comprising:
a substrate;
a cladding layer formed above the substrate;
an active layer formed between the substrate and the cladding layer; and
a common functional layer formed in the cladding layer and separated from the active layer,
wherein the semiconductor optical amplifier integrated laser includes a first domain and a second domain optically connected to the first domain,
wherein the second domain amplifies light from the first domain,
wherein the common functional layer includes a first portion that reflects light having a specific wavelength within a gain band of the active layer in the first domain and a second portion that transmits light having the specific wavelength within the gain band of the active layer in the second domain,
wherein the first domain includes a first grating structure, and
wherein the second domain includes a second grating structure at irregular intervals.
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