US 12,218,338 B2
Electrode, storage battery, power storage device, and electronic device
Kiyofumi Ogino, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Jan. 6, 2022, as Appl. No. 17/569,537.
Application 17/569,537 is a continuation of application No. 15/207,219, filed on Jul. 11, 2016, granted, now 11,289,692.
Claims priority of application No. 2015-142050 (JP), filed on Jul. 16, 2015.
Prior Publication US 2022/0302433 A1, Sep. 22, 2022
Int. Cl. H01M 4/134 (2010.01); H01G 11/28 (2013.01); H01G 11/32 (2013.01); H01G 11/38 (2013.01); H01G 11/42 (2013.01); H01M 4/1395 (2010.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01G 11/66 (2013.01); H01G 11/84 (2013.01); H01M 10/0525 (2010.01)
CPC H01M 4/134 (2013.01) [H01G 11/28 (2013.01); H01G 11/32 (2013.01); H01G 11/38 (2013.01); H01G 11/42 (2013.01); H01M 4/386 (2013.01); H01M 4/622 (2013.01); H01M 4/625 (2013.01); H01G 11/66 (2013.01); H01G 11/84 (2013.01); H01M 4/1395 (2013.01); H01M 10/0525 (2013.01); Y02E 60/10 (2013.01); Y02E 60/13 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for manufacturing a negative electrode, the method comprising the steps of:
forming a plurality of silicon particles;
performing a heat treatment on the plurality of silicon particles in an atmosphere containing air to form a silicon oxide film on a surface of each of the plurality of silicon particles;
mixing a graphene compound, a binder, and the plurality of silicon particles after the heat treatment;
performing an etching treatment on the plurality of silicon particles after the heat treatment; and
forming a slurry after the etching treatment,
wherein part of the silicon oxide film on the surface of each of the plurality of silicon particles is removed by the etching treatment,
wherein the part of the silicon oxide film which is removed by the etching treatment forms a space, and
wherein the heat treatment is performed at a temperature higher than or equal to 700° C. and lower than or equal to 1000° C.