US 12,218,301 B2
Manufacturing method of electronic device
Chih-Wen Lu, Hsinchu (TW); Hao-An Chuang, Hsinchu (TW); and Chun-Yueh Hou, Hsinchu (TW)
Assigned to AUO Corporation, Hsinchu (TW)
Filed by AUO Corporation, Hsinchu (TW)
Filed on Jan. 16, 2024, as Appl. No. 18/413,033.
Application 18/413,033 is a division of application No. 17/376,189, filed on Jul. 15, 2021, granted, now 11,923,491.
Claims priority of provisional application 63/065,641, filed on Aug. 14, 2020.
Claims priority of application No. 110104760 (TW), filed on Feb. 8, 2021.
Prior Publication US 2024/0154078 A1, May 9, 2024
Int. Cl. H01L 33/62 (2010.01); G09G 3/32 (2016.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01)
CPC H01L 33/62 (2013.01) [G09G 3/32 (2013.01); H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 2933/0066 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A manufacturing method of an electronic device, comprising:
forming a conductive material layer on a substrate, the conductive material layer continuously extends from a first surface of the substrate to a second surface while passing through a side surface, wherein the side surface connects the first surface and the second surface;
forming a first protection layer on the conductive material layer and patterning the conductive material layer by using the first protection layer as a mask to form an edge wire, wherein the edge wire is retracted relative to the first protection layer and forms an undercut structure; and
forming a second protection layer on the substrate, wherein the second protection layer fills the undercut structure.