US 12,218,300 B2
Light emitting diode display device and method of fabricating light emitting diode display device
Kyu Oh Kwon, Paju-si (KR); Jae Min Sim, Paju-si (KR); Seung Jun Lee, Paju-si (KR); and Jung Hun Choi, Paju-si (KR)
Assigned to LG DISPLAY CO., LTD., Seoul (KR)
Appl. No. 17/778,274
Filed by LG Display Co., Ltd., Seoul (KR)
PCT Filed Sep. 2, 2020, PCT No. PCT/KR2020/011758
§ 371(c)(1), (2) Date May 19, 2022,
PCT Pub. No. WO2021/132841, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 10-2019-0174025 (KR), filed on Dec. 24, 2019.
Prior Publication US 2022/0393088 A1, Dec. 8, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/005 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) display device, comprising:
a substrate;
an LED including a first semiconductor layer, a first active layer and a second semiconductor layer sequentially disposed and corresponding to a first emission area, a second active layer on the second semiconductor layer and corresponding to a second emission area overlapping a portion of the first emission area, a third semiconductor layer on the second active layer, a third active layer on the second semiconductor layer and corresponding to a third emission area overlapping another portion of the first emission area and a fourth semiconductor layer on the third active layer;
a first transistor on a portion of the substrate for driving the first active layer;
a second transistor on another portion of the substrate for driving the second active layer; and
a third transistor on the first transistor over the portion of the substrate for driving the third active layer.