CPC H01L 33/502 (2013.01) [C09K 11/616 (2013.01); C09K 11/665 (2013.01); C09K 11/77348 (2021.01); C09K 11/7774 (2013.01); H01L 25/0753 (2013.01); H01L 33/60 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01)] | 15 Claims |
1. A light emitting device comprising:
a cavity having a cavity floor;
a first Light Emitting Diode (LED) comprising a first LED chip for generating light with a dominant wavelength from 440 nm to 470 nm and a first photoluminescence layer at least partially covering a light emitting face of the first LED chip;
a second LED chip for generating light with a dominant wavelength from 440 nm to 470 nm; and
a second photoluminescence layer covering the first LED and the second LED chip, the second photoluminescence layer comprising a photoluminescence material for generating light with a peak emission wavelength from 500 nm to 650 nm,
wherein the first LED and the second LED chip are mounted on the cavity floor; and
wherein the first photoluminescence layer comprises at least 75 weight percent (wt %) of a manganese-activated fluoride photoluminescence material of a total photoluminescence material content of the first photoluminescence layer.
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