US 12,218,277 B2
Flip-chip light-emitting diode
Sihe Chen, Xiamen (CN); Yu-Chieh Huang, Xiamen (CN); Yashu Zang, Xiamen (CN); Tao Han, Xiamen (CN); Chunhsien Lee, Xiamen (CN); Chimeng Lu, Xiamen (CN); and Jianbin Chen, Xiamen (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on May 11, 2022, as Appl. No. 17/662,932.
Claims priority of application No. 202110977427.7 (CN), filed on Aug. 24, 2021.
Prior Publication US 2023/0067481 A1, Mar. 2, 2023
Int. Cl. H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 33/38 (2013.01); H01L 33/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A flip-chip light-emitting diode (LED), comprising:
an epitaxial structure which includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order, said epitaxial structure having a first region and a second region that are independent from each other, wherein said epitaxial structure is formed with a plurality of first holes at said first region and a plurality of second holes at said second region, each of said first and second holes extending through said second semiconductor layer and said active layer and terminating at and partially exposing said first semiconductor layer;
a first pad electrode which is disposed on said first region and which is electrically connected to said first semiconductor layer; and
a second pad electrode which is disposed on said second region and which is electrically connected to said second semiconductor layer,
wherein a surface of said first semiconductor layer exposed by said first holes has a total area which is smaller than a total area of a surface of said first semiconductor layer exposed by said second holes.