US 12,218,276 B2
Semiconductor structures and substrates thereof, and methods for manufacturing the same
Kai Cheng, Suzhou (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/613,479
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Jan. 9, 2020, PCT No. PCT/CN2020/071182
§ 371(c)(1), (2) Date Nov. 22, 2021,
PCT Pub. No. WO2021/138872, PCT Pub. Date Jul. 15, 2021.
Prior Publication US 2022/0223757 A1, Jul. 14, 2022
Int. Cl. H01L 33/06 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 27/15 (2013.01); H01L 33/005 (2013.01); H01L 33/06 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate, comprising:
at least one unit region, wherein each of the at least one unit region comprises at least two unit sub-regions, each of the at least two unit sub-regions has at least one gap and at least one self-healing layer for closing the at least one gap; and in one of the at least one unit region, the at least two unit sub-regions respectively have different porosities.