	US 12,218,275 B2
	Semiconductor template and fabrication method
Zhaoxia Bi, Lund (SE); Jonas Ohlsson, Malmo (SE); and Lars Samuelson, Malmo (SE)
Assigned to HEXAGEM AB, Hjarup (SE)
Appl. No. 17/436,818
Filed by HEXAGEM AB, Hjarup (SE)
PCT Filed Mar. 18, 2020, PCT No. PCT/EP2020/057451 § 371(c)(1), (2) Date Sep. 7, 2021, PCT Pub. No. WO2020/187986, PCT Pub. Date Sep. 24, 2020.
Claims priority of application No. 19163334 (EP), filed on Mar. 18, 2019; and application No. 20161913 (EP), filed on Mar. 9, 2020.
Prior Publication US 2022/0246797 A1, Aug. 4, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01)

CPC H01L 33/24 (2013.01) [H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01)]

13 Claims

1. A method for fabrication of an InGaN semiconductor template, comprising:

growing an InGaN pyramid having inclined facets on a semiconductor substrate;

processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface;

growing InGaN, over the first upper surface, to form an InGaN template layer having a c- plane crystal facet forming a top surface; and

depositing a coating layer on the pyramid, prior to removing semiconductor material;

wherein the processing comprises:

polishing the thus coated pyramid to form the truncated pyramid, and

etching the truncated pyramid to remove remaining coating material.

4. A method for fabrication of an InGaN semiconductor template, comprising:

growing an InGaN pyramid having inclined facets on a semiconductor substrate;

processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; and

growing InGaN, over the first upper surface, to form an InGaN template layer having a c- plane crystal facet forming a top surface;

wherein the step of processing the pyramid comprises etching the pyramid;

wherein the etching is performed by in-situ annealing.