US 12,218,274 B2
Semiconductor light emitting device and display apparatus
Donggun Lee, Hwaseong-si (KR); Gibum Kim, Yongin-si (KR); Joosung Kim, Seongnam-si (KR); and Jonguk Seo, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 25, 2020, as Appl. No. 17/032,332.
Claims priority of application No. 10-2020-0012463 (KR), filed on Feb. 3, 2020.
Prior Publication US 2021/0242370 A1, Aug. 5, 2021
Int. Cl. H01L 33/24 (2010.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 25/167 (2013.01); H01L 33/0095 (2013.01); H01L 33/16 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/32 (2013.01); H01L 33/385 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device, comprising:
a light emitting structure in a form of a rod, the light emitting structure including:
a first conductivity-type semiconductor layer, the first conductivity-type semiconductor layer defining a first surface of the light emitting structure,
an active layer,
a second conductivity-type semiconductor layer, the second conductivity-type semiconductor layer defining a second surface of the light emitting structure opposite the first surface, and a side surface of the light emitting structure connecting the first and second surfaces and being perpendicular to the first and second surfaces;
a regrowth semiconductor layer surrounding an entirety of the side surface of the light emitting structure, the regrowth semiconductor layer having a first thickness at a first position along a perimeter of the side surface and a second thickness, different from the first thickness, at a second position along the perimeter of the side surface, wherein the regrowth semiconductor layer comprises an undoped layer;
a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and
a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer,
wherein the regrowth semiconductor layer contacts a side surface of the first conductivity-type semiconductor layer, a side surface of the active layer, and a side surface of the second conductivity-type semiconductor layer.