US 12,218,273 B2
ULED chip, uLED substrate and method for manufacturing the same, el inspection method for uLED substrate, and el inspection apparatus
Yuju Chen, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/776,127
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Mar. 18, 2021, PCT No. PCT/CN2021/081633
§ 371(c)(1), (2) Date May 11, 2022,
PCT Pub. No. WO2021/185329, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 202010196669.8 (CN), filed on Mar. 19, 2020.
Prior Publication US 2022/0384677 A1, Dec. 1, 2022
Int. Cl. H01L 33/22 (2010.01); G01N 21/66 (2006.01); G01N 21/95 (2006.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/22 (2013.01) [G01N 21/66 (2013.01); G01N 21/9501 (2013.01); H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A micro light-emitting diode (μLED) chip, comprising: a first electrode layer; a second semiconductor layer located on a surface of the first electrode layer, the second semiconductor layer being electrically connected to the first electrode layer, and being configured to transmit first carriers; a first semiconductor layer located on a side of the second semiconductor layer away from the first electrode layer, the first semiconductor layer being configured to transmit second carriers; and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer, the light-emitting layer being configured to be excited to emit light upon combination of the first carriers and the second carriers, wherein a surface of the first semiconductor layer away from the light-emitting layer is a concave-convex microstructure, and convex portions of the concave-convex microstructure are configured to receive an electron beam.