US 12,218,272 B2
Semiconductor device
Kazuaki Ebata, Tokyo (JP); Yoshitaka Taniyasu, Tokyo (JP); and Kazuhide Kumakura, Tokyo (JP)
Assigned to NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo (JP)
Appl. No. 17/422,913
Filed by Nippon Telegraph and Telephone Corporation, Tokyo (JP)
PCT Filed Feb. 10, 2020, PCT No. PCT/JP2020/005085
§ 371(c)(1), (2) Date Jul. 14, 2021,
PCT Pub. No. WO2020/175125, PCT Pub. Date Sep. 3, 2020.
Claims priority of application No. 2019-031415 (JP), filed on Feb. 25, 2019.
Prior Publication US 2022/0059723 A1, Feb. 24, 2022
Int. Cl. H01L 33/16 (2010.01); H01L 33/00 (2010.01); H01S 5/343 (2006.01); H01L 33/32 (2010.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01)
CPC H01L 33/16 (2013.01) [H01L 33/0025 (2013.01); H01L 33/007 (2013.01); H01S 5/34333 (2013.01); H01L 33/32 (2013.01); H01S 5/3063 (2013.01); H01S 5/3425 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor apparatus, comprising:
a substrate;
a buffer layer on and in contact with the substrate;
an n-type semiconductor layer on and in contact with the buffer layer;
a light-emitting layer on and in contact with a first portion of the n-type semiconductor layer;
a first electrode on and in contact with a second portion of the n-type semiconductor layer and at least partially surrounding the light-emitting layer;
an electron block layer on and in contact with the light-emitting layer;
a p-type semiconductor layer on and in contact with the electron block layer, wherein:
the p-type semiconductor layer includes a plurality of unit semiconductor layers;
each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface;
the p-type nitride semiconductor includes nitrogen and two or more elements; and
each of the plurality of unit semiconductor layers has a composition changing in a stacking direction;
a contact layer on and in contact with the p-type semiconductor layer;
a semi-transparent layer on and in contact with the contact layer; and
a second electrode on and in contact with a portion of the semi-transparent layer.