US 12,218,268 B2
Fast spatial light modulator based on atomically thin reflector
Trond I. Andersen, Cambridge, MA (US); Ryan J. Gelly, Cambridge, MA (US); Giovanni Scuri, Cambridge, MA (US); Bo L. Dwyer, Cambridge, MA (US); Dominik S. Wild, Garching (DE); Rivka Bekenstein, Cambridge, MA (US); Andrey Sushko, Cambridge, MA (US); Susanne F. Yelin, Cambridge, MA (US); Philip Kim, Cambridge, MA (US); Hongkun Park, Cambridge, MA (US); and Mikhail D. Lukin, Cambridge, MA (US)
Assigned to President and Fellows of Harvard College, Cambridge, MA (US)
Filed by President and Fellows of Harvard College, Cambridge, MA (US)
Filed on Feb. 23, 2022, as Appl. No. 17/678,393.
Claims priority of provisional application 63/153,726, filed on Feb. 25, 2021.
Prior Publication US 2022/0271187 A1, Aug. 25, 2022
Int. Cl. H01L 31/113 (2006.01); H01L 31/0224 (2006.01); H01L 31/032 (2006.01)
CPC H01L 31/1136 (2013.01) [H01L 31/022466 (2013.01); H01L 31/032 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An optical device, comprising:
a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
a first electrode electrically connected to the semiconductor layer;
a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary.