US 12,218,267 B2
Preparation method and application of an Er doped Ga2O3 film
Dongsheng Li, Hangzhou (CN); and Deren Yang, Hangzhou (CN)
Assigned to ZHEJIANG UNIVERSITY, Hangzhou (CN)
Appl. No. 17/789,191
Filed by ZHEJIANG UNIVERSITY, Hangzhou (CN)
PCT Filed Nov. 24, 2021, PCT No. PCT/CN2021/132711
§ 371(c)(1), (2) Date Jun. 25, 2022,
PCT Pub. No. WO2022/148165, PCT Pub. Date Jul. 14, 2022.
Claims priority of application No. 202110031291.0 (CN), filed on Jan. 11, 2021.
Prior Publication US 2023/0246115 A1, Aug. 3, 2023
Int. Cl. H01L 31/109 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01); H01L 31/032 (2006.01)
CPC H01L 31/109 (2013.01) [C23C 14/0688 (2013.01); C23C 14/352 (2013.01); H01L 31/0321 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A near infrared electroluminescent device based on the impact of hot-electrons, characterized in that the device uses Ga2O3: Er films, whose preparation method comprising the steps of:
(1) in a vacuum chamber, introducing mixed gas of Ar and O2, using Radio-Frequency magnetron sputtering method to sputter the erbium-doped gallium oxide target or co-sputter the erbium target and the gallium oxide target, after sputtering a blacking plate for 5 minutes, then starting sputtering deposition an erbium-doped gallium oxide film on a heated substrate; the substrate being thermally oxidized n-type silicon;
(2) under an atmosphere of oxygen or nitrogen, subjecting the erbium-doped gallium oxide film obtained in step (1) to a high temperature heat treatment above 300° C. to crystallize the gallium oxide while activating the erbium, and then naturally cooling down to obtain the erbium-doped gallium oxide film;
wherein one side of the substrate of the erbium-doped gallium oxide film is deposited with a metal back electrode for connecting to the negative electrode of the power supply, and another side of the erbium-doped gallium oxide film is deposited with an indium tin oxide (ITO) transparent electrode for connecting to the positive electrode of the power supply; and
wherein an onset voltage of the near-infrared electroluminescent device based on hot electron impact ionization is lower than 20 V.