US 12,218,261 B2
InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and preparation method and application thereof
Wenliang Wang, Guangzhou (CN); Guoqiang Li, Guangzhou (CN); Baiyu Su, Guangzhou (CN); Zhengliang Lin, Guangzhou (CN); Deqi Kong, Guangzhou (CN); and Wenjin Mai, Guangzhou (CN)
Assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou (CN)
Filed by SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou (CN)
Filed on Apr. 29, 2022, as Appl. No. 17/732,524.
Application 17/732,524 is a continuation of application No. PCT/CN2022/083521, filed on Mar. 28, 2022.
Claims priority of application No. 202110390252.X (CN), filed on Apr. 12, 2021.
Prior Publication US 2022/0328706 A1, Oct. 13, 2022
Int. Cl. H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01)
CPC H01L 31/02363 (2013.01) [H01L 31/022408 (2013.01); H01L 31/035236 (2013.01); H01L 31/0392 (2013.01); H01L 31/1848 (2013.01); H01L 31/1864 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01); H01L 31/1852 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure, comprising: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top, wherein the InGaN/GaN multiple quantum well layer has a groove and a mesa, the mesa and the groove of the InGaN/GaN multiple quantum well layer are provided with a Si3N4 passivation layer, the Si3N4 passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the Si3N4 passivation layer on the mesa is provided with a second metal layer electrode,
wherein the embedded electrode is the first metal layer electrode, and the passivation layer structure is the Si3N4 passivation layer.