US 12,218,259 B2
Solar cell and manufacturing method
Shimpei Okamoto, Settsu (JP); and Junichi Nakamura, Settsu (JP)
Assigned to KANEKA CORPORATION, Osaka (JP)
Filed by KANEKA CORPORATION, Osaka (JP)
Filed on Feb. 1, 2023, as Appl. No. 18/163,134.
Application 18/163,134 is a continuation of application No. PCT/JP2021/028729, filed on Aug. 3, 2021.
Claims priority of application No. 2020-134104 (JP), filed on Aug. 6, 2020.
Prior Publication US 2023/0178665 A1, Jun. 8, 2023
Int. Cl. H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC H01L 31/022433 (2013.01) [H01L 31/068 (2013.01); H01L 31/1804 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a semiconductor substrate having a first conductivity type;
a first semiconductor layer on a rear surface of the semiconductor substrate and having a conductivity type different from that of the semiconductor substrate;
a second semiconductor layer on the rear surface of the semiconductor substrate and having a same conductivity type as that of the semiconductor substrate;
a first electrode pattern stacked on the first semiconductor layer;
a second electrode pattern stacked on the second semiconductor layer, wherein the first semiconductor layer has a main functional portion which has a first base end portion at a first end portion on a first side in a first direction of the semiconductor substrate over an entire length of the semiconductor substrate in a second direction intersecting the first direction, and a plurality of first collecting portions extending from the first base end portion toward a second side in the first direction; and on which the first electrode pattern is stacked; and
an isolation portion which is configured linearly at a second end portion on the second side of the semiconductor substrate over an entire length in the second direction; and on which the first electrode pattern is not stacked,
wherein the second semiconductor layer has a second base end portion adjacent to of the isolation portion and extending in the second direction, and a plurality of second collecting portions extending from the second base end portion to the first side in the first direction, and
wherein the first semiconductor layer is physically disconnected from the isolation portion and is separated from the isolation portion by the second semiconductor layer.