US 12,218,258 B2
Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system
Gang Chen, Yiwu (CN); Wenli Xu, Yiwu (CN); Kaifu Qiu, Yiwu (CN); Yongqian Wang, Yiwu (CN); and Xinqiang Yang, Yiwu (CN)
Assigned to Solarlab Aiko Europe GmbH, Freiburg (DE)
Filed by Solarlab Aiko Europe GmbH, Freiburg (DE)
Filed on Apr. 25, 2024, as Appl. No. 18/645,370.
Application 18/645,370 is a continuation of application No. 18/374,819, filed on Sep. 29, 2023, granted, now 12,009,440.
Application 18/374,819 is a continuation in part of application No. 18/110,915, filed on Feb. 17, 2023, granted, now 11,837,671, issued on Dec. 5, 2023.
Application 18/110,915 is a continuation in part of application No. 17/509,049, filed on Oct. 24, 2021, granted, now 11,749,761, issued on Sep. 5, 2023.
Claims priority of application No. 202110828468.X (CN), filed on Jul. 22, 2021.
Prior Publication US 2024/0274729 A1, Aug. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01)
CPC H01L 31/02167 (2013.01) [H01L 31/02363 (2013.01); H01L 31/035281 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A cell assembly, comprising:
a silicon substrate;
a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, wherein an orthogonal projection of at least a portion of the second dielectric layer onto the silicon substrate is disposed between orthogonal projections of the first doped region and the second doped region along a lateral direction of the silicon substrate; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
each of the first and second doped regions comprises a first doped layer, a passivation layer, and a second doped layer;
the first doped layer of the first doped region is a part of the silicon substrate;
the passivation layer of the first doped region is provided on the first doped layer of the first doped region; and
the passivation layer of the first doped region and the passivation layer of the second doped region are of a porous structure, wherein the porous structure comprises a hole region, and at least one of a part of the first doped layer or a part of the second doped layer is disposed in the hole region;
one of the first doped region and the second doped region is a P-type doped region, and the other of the first doped region and the second doped region is an N-type doped region;
a hole density of the passivation layer in the P-type doped region is greater than a hole density of the passivation layer in the N-type doped region.