US 12,218,252 B2
Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof
Chia-Jung Yu, Hsinchu (TW); and Pin-Cheng Hsu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/460,969.
Prior Publication US 2023/0068105 A1, Mar. 2, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 61/00 (2023.01)
CPC H01L 29/78696 (2013.01) [H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H10B 61/22 (2023.02); H01L 29/7869 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a dielectric layer;
a transistor at least partially in the dielectric layer, wherein the transistor comprises:
a gate electrode;
a gate dielectric layer over the gate electrode;
a source electrode and a drain electrode over the gate dielectric layer and contacting the gate dielectric layer; and
a semiconductor layer over the gate dielectric layer and contacting the gate dielectric layer, wherein each of the source electrode and the drain electrode comprises a conductive material different from a material of the semiconductor layer, and a sidewall of the source electrode or a sidewall of the drain electrode contacts a sidewall of the semiconductor layer.