US 12,218,251 B2
Semiconductor device
Tatsuya Honda, Isehara (JP); Masashi Tsubuku, Atsugi (JP); Yusuke Nonaka, Atsugi (JP); Takashi Shimazu, Machida (JP); and Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Apr. 4, 2024, as Appl. No. 18/626,594.
Application 18/626,594 is a continuation of application No. 18/244,329, filed on Sep. 11, 2023.
Application 18/244,329 is a continuation of application No. 17/229,021, filed on Apr. 13, 2021, granted, now 11,791,415, issued on Oct. 17, 2023.
Application 17/229,021 is a continuation of application No. 16/812,919, filed on Mar. 9, 2020, granted, now 11,217,701, issued on Jan. 4, 2022.
Application 16/812,919 is a continuation of application No. 16/381,479, filed on Apr. 11, 2019, granted, now 10,622,485, issued on Apr. 14, 2020.
Application 16/381,479 is a continuation of application No. 15/422,945, filed on Feb. 2, 2017, granted, now 10,290,744, issued on May 14, 2019.
Application 15/422,945 is a continuation of application No. 14/682,356, filed on Apr. 9, 2015, granted, now 9,741,860, issued on Aug. 22, 2017.
Application 14/682,356 is a continuation of application No. 13/626,261, filed on Sep. 25, 2012, granted, now 9,029,852, issued on May 12, 2015.
Claims priority of application No. 2011-215682 (JP), filed on Sep. 29, 2011.
Prior Publication US 2024/0250184 A1, Jul. 25, 2024
Int. Cl. H01L 29/786 (2006.01); G02F 1/1333 (2006.01); G02F 1/1337 (2006.01); G02F 1/1339 (2006.01); G02F 1/1343 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H10K 59/121 (2023.01)
CPC H01L 29/7869 (2013.01) [G02F 1/133345 (2013.01); G02F 1/1337 (2013.01); G02F 1/13394 (2013.01); G02F 1/134309 (2013.01); H01L 27/1225 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/51 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); G02F 2202/10 (2013.01); H01L 21/02565 (2013.01); H10K 59/1213 (2023.02)] 29 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising an insulating film a gate electrode, an oxide semiconductor film, a source electrode, and a drain electrode the method comprising:
wherein the oxide semiconductor film includes an indium oxide film,
wherein the indium oxide film is formed by an atomic layer deposition method,
wherein a concentration of carbon in the indium oxide film is lower than or equal to 1.0×1020 atoms/cm3, and
wherein the indium oxide film includes a crystal portion.