US 12,218,246 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP); Shinya Sasagawa, Kanagawa (JP); Katsuaki Tochibayashi, Kanagawa (JP); Tsutomu Murakawa, Kanagawa (JP); and Erika Takahashi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/414,490
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Nov. 19, 2019, PCT No. PCT/IB2019/059909
§ 371(c)(1), (2) Date Jun. 16, 2021,
PCT Pub. No. WO2020/136467, PCT Pub. Date Jul. 2, 2020.
Claims priority of application No. 2018-247444 (JP), filed on Dec. 28, 2018; application No. 2018-247446 (JP), filed on Dec. 28, 2018; application No. 2019-010812 (JP), filed on Jan. 25, 2019; and application No. 2019-087969 (JP), filed on May 8, 2019.
Prior Publication US 2022/0077317 A1, Mar. 10, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01)
CPC H01L 29/7869 (2013.01) [H01L 21/02565 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H10B 12/00 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a transistor,
wherein the transistor comprises:
a first insulator;
a first oxide over the first insulator;
a first conductor, a second conductor, and a second oxide over the first oxide, the second oxide being between the first conductor and the second conductor;
a second insulator over the second oxide; and
a third conductor over the second insulator,
wherein a top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor,
wherein the first oxide in the region overlapping with the third conductor comprises a curved surface between a side surface and the top surface of the first oxide, and
wherein a curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.