US 12,218,243 B2
Semiconductor device, display apparatus, and manufacturing method of semiconductor device
Atsushi Sasaki, Tokyo (JP)
Assigned to JOLED INC., Tokyo (JP)
Filed by JOLED INC., Tokyo (JP)
Filed on Mar. 29, 2022, as Appl. No. 17/657,066.
Claims priority of application No. 2021-056354 (JP), filed on Mar. 30, 2021.
Prior Publication US 2022/0320346 A1, Oct. 6, 2022
Int. Cl. H01L 29/786 (2006.01); B05D 1/26 (2006.01); H01L 29/66 (2006.01); H10K 59/12 (2023.01)
CPC H01L 29/78636 (2013.01) [B05D 1/26 (2013.01); H01L 29/66742 (2013.01); H10K 59/12 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a conductive resin layer that includes an insulating resin and a plurality of first fillers dispersed in the insulating resin and has a first main surface and a second main surface on a side opposite to the first main surface; and
an element layer that is arranged on the first main surface and includes a semiconductor element, wherein
each of the plurality of first fillers is a fibrous conductive filler,
the conductive resin layer has
a first surface layer section that includes the first main surface and has a thickness which is 30% of a thickness of the conductive resin layer,
a second surface layer section that includes the second main surface and has a thickness which is 30% of the thickness of the conductive resin layer, and
an intermediate layer section arranged between the first surface layer section and the second surface layer section, and,
among the plurality of first fillers, first fillers arranged in the first surface layer section have a directional angle relative to the first main surface which is smaller than a directional angle of first fillers arranged in the intermediate layer section.