US 12,218,242 B2
Semiconductor structure
Yu-Lien Huang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 15, 2023, as Appl. No. 18/336,005.
Application 18/336,005 is a division of application No. 17/232,614, filed on Apr. 16, 2021, granted, now 11,721,764.
Prior Publication US 2023/0327022 A1, Oct. 12, 2023
Int. Cl. H01L 29/76 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
at least a fin structure extending in a first direction;
a gate structure over the fin structure and extending in a second direction different from the first direction;
a connecting structure disposed over the fin structure and isolated from the gate structure;
a first dielectric structure over the gate structure; and
a second dielectric structure extending in the first direction,
wherein the first dielectric structure and the second dielectric structure comprise a same material, and a top surface of the first dielectric structure and a top surface of the second dielectric structure are substantially aligned with each other.