US 12,218,238 B2
Growth structure for strained channel, and strained channel using the same and method of manufacturing device using the same
Sanghyeon Kim, Daejeon (KR); and Hyeongrak Lim, Daejeon (KR)
Assigned to Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed by Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed on Nov. 9, 2021, as Appl. No. 17/522,851.
Prior Publication US 2022/0216338 A1, Jul. 7, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/7849 (2013.01) [H01L 21/76251 (2013.01); H01L 29/66742 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A growth structure for a strained channel, comprising: a support substrate;
a strain-relaxed buffer (SRB) layer disposed on a support substrate;
a base growth layer grown to have a first composition on the SRB layer, wherein the base growth layer comprises: a buffer layer disposed on the SRB layer and a p-type layer disposed on the buffer layer,
a first strained channel layer grown to have a second composition on the base growth layer;
a first etch-stop layer adjacent to the first strained channel layer; and
a second strained channel layer grown to have a third composition on the first etch-stop layer, wherein the second strained channel layer is adjacent to the first strained channel layer.