US 12,218,235 B2
Hybrid component with silicon and wide bandgap semconductor material
Christopher Boguslaw Kocon, Mountain Top, PA (US); Henry Litzmann Edwards, Garland, TX (US); and Curry Bachman Taylor, Garland, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Sep. 28, 2021, as Appl. No. 17/487,149.
Claims priority of provisional application 63/152,386, filed on Feb. 23, 2021.
Prior Publication US 2022/0271158 A1, Aug. 25, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/7816 (2013.01) [H01L 29/402 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a hybrid component;
a substrate, the substrate including silicon;
a silicon portion of the hybrid component, the silicon portion being in the silicon;
a first current terminal of the hybrid component on the silicon portion of the hybrid component;
a wide bandgap (WBG) structure including a WBG semiconductor material, on the silicon portion, the WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon; and
a second current terminal of the hybrid component on the WBG structure.