US 12,218,230 B2
P-GaN high-electron-mobility transistor
Ting-Chang Chang, Kaohsiung (TW); Mao-Chou Tai, Kaohsiung (TW); Yu-Xuan Wang, Kaohsiung (TW); Wei-Chen Huang, Kaohsiung (TW); Ting-Tzu Kuo, Kaohsiung (TW); Kai-Chun Chang, Kaohsiung (TW); and Shih-Kai Lin, Kaohsiung (TW)
Assigned to NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)
Filed by NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)
Filed on Jul. 19, 2022, as Appl. No. 17/868,104.
Claims priority of application No. 111118402 (TW), filed on May 17, 2022.
Prior Publication US 2023/0378337 A1, Nov. 23, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/7785 (2013.01) [H01L 29/2003 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A p-GaN high-electron-mobility transistor, comprising:
a substrate;
a channel layer stacked on the substrate;
a supply layer stacked on the channel layer;
a first doped layer stacked on the supply layer;
a second doped layer stacked on the first doped layer; and
a third doped layer stacked on the second doped layer, wherein a doping concentration of the first doped layer and a doping concentration of the third doped layer are lower than a doping concentration of the second doped layer, a gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.