US 12,218,228 B2
Semiconductor device and manufacturing method
Koh Yoshikawa, Matsumoto (JP); Masayuki Momose, Matsumoto (JP); and Toshiyuki Matsui, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Aug. 24, 2021, as Appl. No. 17/409,809.
Application 17/409,809 is a continuation of application No. PCT/JP2020/034015, filed on Sep. 8, 2020.
Claims priority of application No. 2019-165167 (JP), filed on Sep. 11, 2019.
Prior Publication US 2021/0384330 A1, Dec. 9, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/7396 (2013.01) [H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7811 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate including a bulk donor;
an active portion provided in the semiconductor substrate; and
an edge termination structure portion provided between the active portion and an end side of the semiconductor substrate in the semiconductor substrate at an upper surface of the semiconductor substrate,
wherein the active portion comprises a first high concentration region, wherein the first high concentration region includes hydrogen and has a higher donor concentration than a donor concentration of the bulk donor,
wherein the semiconductor substrate comprises a buffer region provided below the first high concentration region,
wherein the edge termination structure portion comprises a second high concentration region above the buffer region,
wherein the second high concentration region includes hydrogen and has a higher donor concentration than the donor concentration of the bulk donor,
wherein a distance between an upper surface of the buffer region and an upper surface of the second high concentration region in a depth direction is longer than a distance between the upper surface of the buffer region and an upper surface of the first high concentration region,
wherein a hydrogen concentration distribution in the depth direction in the first high concentration region has a first hydrogen concentration peak, and
wherein in the edge termination structure portion, a hydrogen concentration at a same depth position as the first hydrogen concentration peak is lower than a hydrogen concentration at the first hydrogen concentration peak.