US 12,218,225 B1
Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure
Cheng-Ming Lin, Kaohsiung (TW); Kenichi Sano, Hsinchu (TW); Wei-Yen Woon, Taoyuan (TW); and Szuya Liao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Dec. 20, 2023, as Appl. No. 18/390,272.
Application 18/390,272 is a continuation of application No. 18/515,921, filed on Nov. 21, 2023.
Int. Cl. H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0922 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a semiconductor structure having a bottom channel region and a top channel region over the bottom channel region, wherein the bottom channel region includes bottom channels and the top channel region includes top channels;
forming an interfacial dielectric layer to wrap around each of the top channels;
applying a first supercritical carbon dioxide fluid to the interfacial dielectric layer;
forming a high-k dielectric layer on the interfacial dielectric layer and wrapping around the each of the top channels;
applying a second supercritical carbon dioxide fluid to the high-k dielectric layer; and
forming a gate electrode on the high-k dielectric layer.