US 12,218,224 B2
Method for forming semiconductor device
Wang-Chun Huang, Hsinchu (TW); Hou-Yu Chen, Hsinchu County (TW); Kuan-Lun Cheng, Hsin-Chu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/885,058.
Application 17/885,058 is a division of application No. 17/226,891, filed on Apr. 9, 2021, granted, now 11,735,647.
Claims priority of provisional application 63/141,764, filed on Jan. 26, 2021.
Prior Publication US 2022/0384620 A1, Dec. 1, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/82345 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 29/7851 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H01L 29/42392 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a workpiece comprising:
a first active region and a second active region,
an isolation feature disposed between lower portions of the first active region and the second active region,
a dielectric fin disposed on the isolation feature and between the first active region and the second active region;
depositing a gate dielectric layer over the first active region, the isolation feature, the dielectric fin, and the second active region;
depositing a protection layer over the gate dielectric layer;
depositing a cap layer over the protection layer;
selectively removing the cap layer over the first active region while the second active region remains covered by the cap layer;
forming a first metal layer over the first active region, the dielectric fin and the cap layer over the second active region;
selectively removing the first metal layer and the cap layer over the second active region; and
forming a second metal layer over the second active region and the first metal layer over the first active region.