US 12,218,222 B2
FinFET device and method of forming same
Chien-Wei Lee, Kaohsiung (TW); Che-Yu Lin, Hsinchu (TW); Hsueh-Chang Sung, Zhubei (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 6, 2022, as Appl. No. 17/805,581.
Application 17/805,581 is a division of application No. 16/458,571, filed on Jul. 1, 2019, granted, now 11,355,620.
Claims priority of provisional application 62/753,739, filed on Oct. 31, 2018.
Prior Publication US 2022/0302282 A1, Sep. 22, 2022
Int. Cl. H01L 29/66 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01J 37/32724 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/76224 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7851 (2013.01); H01J 37/321 (2013.01); H01J 37/32449 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system for performing a plasma cleaning process, comprising:
a process chamber;
a plasma generation chamber separated from the process chamber;
a showerhead located within the process chamber, wherein the showerhead is connected to the plasma generation chamber by a plurality of conduits, wherein the showerhead comprises a stack of gas distribution plates, wherein each gas distribution plate is separated from the process chamber, wherein each gas distribution plate is laterally separated from interior sidewalls of the process chamber, wherein each gas distribution plate comprises a plurality of openings, wherein the plurality of openings of each gas distribution plate are laterally offset from the plurality of openings of a neighboring gas distribution plate, wherein each gas distribution plate is electrically grounded; and
a holder disposed within the process chamber and configured to hold a wafer, the holder comprising a heating element, wherein the heating element is configured to generate a process temperature within the process chamber between 300° C. and 1000° C. during the plasma cleaning process.