US 12,218,221 B2
Semiconductor device and method
Wan-Yi Kao, Baoshan Township (TW); Fang-Yi Liao, New Taipei (TW); Shu Ling Liao, Taichung (TW); Yen-Chun Huang, New Taipei (TW); Che-Hao Chang, Hsinchu (TW); Yung-Cheng Lu, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 13, 2022, as Appl. No. 17/744,061.
Claims priority of provisional application 63/264,200, filed on Nov. 17, 2021.
Prior Publication US 2023/0155006 A1, May 18, 2023
Int. Cl. H01L 21/44 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a fin extending from a semiconductor substrate;
a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and
a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure comprising:
a first liner layer in contact with the STI region; and
a first fill material over the first liner layer, the first fill material comprising a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, wherein a first carbon concentration in the lower portion of the first fill material is greater than a second carbon concentration in an upper portion of the first fill material.