16. A semiconductor structure, comprising a substrate, a thin-film stacked structure, an epitaxial silicon pillar and a first isolation layer, wherein the thin-film stacked structure is provided on a surface of the substrate; a first hole exposing the substrate is formed in the thin-film stacked structure; the epitaxial silicon pillar is provided in the first hole; the first isolation layer is provided in a first trench; the first trench is formed by removing a part of the thin-film stacked structure and a part of the epitaxial silicon pillar along a first direction; the first trench passes through a center of the epitaxial silicon pillar and divides the epitaxial silicon pillar into a first half pillar and a second half pillar; a first channel region of a first doping type is formed in a sidewall of the first half pillar away from the first trench; a second channel region of a second doping type is formed in a sidewall of the second half pillar away from the first trench; one of the first doping type and the second doping type is an N type, and the other one is a P type; and a gate dielectric layer and a gate conductive layer are arranged on a surface of each of the first channel region and the second channel region.