US 12,218,213 B2
Semiconductor device structure and method for forming the same
An-Hung Tai, Hsinchu County (TW); Jian-Hao Chen, Hsinchu (TW); Hui-Chi Chen, Zhudong Township, Hsinchu County (TW); and Kuo-Feng Yu, Zhudong Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 22, 2022, as Appl. No. 17/677,390.
Prior Publication US 2023/0268408 A1, Aug. 24, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 29/0665 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a dielectric layer over a substrate, wherein the dielectric layer has a trench;
forming a gate stack in the trench, wherein a first top surface of the gate stack is lower than a second top surface of the dielectric layer;
forming a cap layer over the gate stack and in the trench;
forming a protective layer over the cap layer, wherein a lower portion of the protective layer is embedded in the cap layer;
forming a first through hole in the protective layer;
forming a second through hole in the cap layer and under the first through hole; and
forming a contact structure in the first through hole and the second through hole.