CPC H01L 29/41791 (2013.01) [H01L 21/76232 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76843 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01)] | 20 Claims |
1. A device comprising:
a gate structure over a substrate;
a source/drain epitaxial structure adjacent the gate structure;
a metal oxide structure above the source/drain epitaxial structure;
a metal alloy layer over the source/drain epitaxial structure, wherein an entirety of a sidewall of the metal alloy layer is in contact with the metal oxide structure; and
a contact over the metal alloy layer and the metal oxide structure.
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