US 12,218,210 B2
Semiconductor device
Shih-Cheng Chen, New Taipei (TW); Chun-Hsiung Lin, Hsinchu County (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 3, 2024, as Appl. No. 18/403,495.
Application 17/853,709 is a division of application No. 16/886,572, filed on May 28, 2020, granted, now 11,380,768, issued on Jul. 5, 2022.
Application 18/403,495 is a continuation of application No. 17/853,709, filed on Jun. 29, 2022, granted, now 11,901,424.
Prior Publication US 2024/0136418 A1, Apr. 25, 2024
Int. Cl. H01L 29/417 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/76232 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76843 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a gate structure over a substrate;
a source/drain epitaxial structure adjacent the gate structure;
a metal oxide structure above the source/drain epitaxial structure;
a metal alloy layer over the source/drain epitaxial structure, wherein an entirety of a sidewall of the metal alloy layer is in contact with the metal oxide structure; and
a contact over the metal alloy layer and the metal oxide structure.