US 12,218,207 B2
Method for manufacturing semiconductor device
Qiyue Zhao, Suzhou (CN); Wuhao Gao, Suzhou (CN); and Fengming Lin, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed by INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed on Jan. 15, 2024, as Appl. No. 18/412,609.
Application 18/412,609 is a division of application No. 17/275,680, granted, now 11,929,406, previously published as PCT/CN2021/076958, filed on Feb. 19, 2021.
Prior Publication US 2024/0162306 A1, May 16, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/404 (2013.01) [H01L 21/56 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
forming a first nitride-based semiconductor layer over a substrate;
forming a second nitride-based semiconductor layer on the first nitride-based semiconductor layer;
forming a gate electrode over the second nitride-based semiconductor layer;
forming a first passivation layer on the second nitride-based semiconductor layer to cover the gate electrode;
forming a first blanket field plate on the first passivation layer;
patterning the first blanket field plate to form a first field plate above the gate electrode using a wet etching process;
forming a second passivation layer on the first passivation layer to cover the first field plate;
forming a second blanket field plate on the second passivation layer; and
patterning the second blanket field plate to form a second field plate above the first field plate using a dry etching process.