CPC H01L 29/24 (2013.01) [H01L 29/1606 (2013.01); H01L 29/267 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a channel member including a first channel layer and a second channel layer over the first channel layer;
a dielectric feature inserted between the second channel layer and the first channel layer;
a gate structure over the channel member; and
a source feature and a drain feature of a semiconductor material,
wherein the second channel layer includes a two-dimensional material, and wherein the semiconductor material of the source and drain features electrically connects to the first and second channel layers.
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