US 12,218,203 B2
Integrated circuit structure and method with solid phase diffusion
Cheng-Yi Peng, Taipei (TW); Ling-Yen Yeh, Hsinchu (TW); Chi-Wen Liu, Hsinchu (TW); Chih-Sheng Chang, Hsinchu (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,168.
Application 18/360,168 is a continuation of application No. 17/114,218, filed on Dec. 7, 2020, granted, now 11,749,720.
Application 17/114,218 is a continuation of application No. 16/218,547, filed on Dec. 13, 2018, granted, now 10,861,937, issued on Dec. 8, 2020.
Application 16/218,547 is a continuation of application No. 15/657,397, filed on Jul. 24, 2017, granted, now 10,164,016, issued on Dec. 25, 2018.
Application 15/657,397 is a continuation of application No. 14/969,077, filed on Dec. 15, 2015, granted, now 9,716,146, issued on Jul. 25, 2017.
Prior Publication US 2023/0369409 A1, Nov. 16, 2023
Int. Cl. H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1083 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first fin active region and a second fin active region disposed on a substrate;
a first dielectric isolation structure disposed on the substrate and interfacing with the first fin active region and the second fin active region;
a first dopant region disposed within the first dielectric isolation structure and extending to a first depth within the first dielectric isolation structure, the first dopant region including a first dopant; and
a second dopant region disposed within the first dielectric isolation structure and extending to a second depth within the first dielectric isolation structure, the second depth being different than first depth such that one of the first dopant region and the second dopant region extends within the first dielectric isolation structure towards the substrate to a deeper depth than the other of the first dopant region and the second dopant region, the second dopant region including a second dopant that is different than the first dopant.