US 12,218,201 B2
Device architectures with tensile and compressive strained substrates
Bich-Yen Nguyen, Austin, TX (US); Christophe Maleville, Lumbin (FR); Walter Schwarzenbach, Saint Nazaire Les Eymes (FR); Gong Xiao, Singapore (SG); Aaron Thean, Singapore (SG); Chen Sun, Singapore (SG); and Haiwen Xu, Singapore (SG)
Assigned to National University of Singapore, Singapore (SG); and Soitec, Bernin (FR)
Filed by Soitec, Bernin (FR); and National University of Singapore, Singapore (SG)
Filed on Jun. 14, 2021, as Appl. No. 17/347,417.
Prior Publication US 2022/0399441 A1, Dec. 15, 2022
Int. Cl. H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/84 (2006.01); H01L 27/10 (2006.01); H01L 27/12 (2006.01); H01L 29/161 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1037 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/26526 (2013.01); H01L 21/845 (2013.01); H01L 27/10 (2013.01); H01L 27/1211 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/7838 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a base substrate;
an insulating layer on the base substrate, the insulating layer having a thickness between about 5 nm and about 100 nm; and
an active layer comprising at least two pluralities of different volumes of semiconductor material comprising silicon, germanium, silicon germanium or any combination thereof, the active layer disposed over the insulating layer, the at least two pluralities of different volumes of semiconductor material comprising:
a first plurality of volumes of semiconductor material having a tensile strain of at least 0.6%; and
a second plurality of volumes of semiconductor material having a compressive strain of at least −0.6%, the second plurality of volumes of semiconductor material comprising a compressive strained silicon germanium material positioned on recrystallized silicon obtained from crystallization of ion-implanted amorphous silicon.