CPC H01L 29/0673 (2013.01) [H01L 21/2654 (2013.01); H01L 27/0924 (2013.01)] | 20 Claims |
1. A device comprising:
a first nanostructure;
a second nanostructure;
a gate dielectric around the first nanostructure and the second nanostructure; and
a gate electrode comprising:
a work function tuning layer on the gate dielectric, the work function tuning layer and the gate dielectric completely filling a region between the first nanostructure and the second nanostructure, the work function tuning layer comprising a multi-layer of pure work function metals, an upper one of the pure work function metals having a different thickness than a lower one of the pure work function metals;
an adhesion layer on the work function tuning layer; and
a fill layer on the adhesion layer.
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