US 12,218,198 B2
Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
Matthias Passlack, Hayward, CA (US); Marcus Johannes Henricus Van Dal, Linden (BE); Timothy Vasen, Tervuren (BE); and Georgios Vellianitis, Heverlee (BE)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/226,192.
Application 17/397,432 is a division of application No. 16/516,181, filed on Jul. 18, 2019, granted, now 11,088,246, issued on Aug. 10, 2021.
Application 18/226,192 is a continuation of application No. 17/397,432, filed on Aug. 9, 2021, granted, now 11,769,798.
Prior Publication US 2023/0369397 A1, Nov. 16, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0673 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a source/drain region of a gate-all-around field effect transistor (GAA FET), the method comprising:
forming a first support layer;
forming a first dielectric layer over the first support layer;
disposing carbon nanotubes (CNTs) over the first dielectric layer;
forming a second dielectric layer to fully cover the CNTs;
removing a part of the second dielectric layer to partially expose the CNTs, such that, within a cross-section perpendicular to an axial direction, each CNT is partially enclosed by the second dielectric layer;
forming a second support layer over the second dielectric layer to form a stacked layer such that, within the cross-section perpendicular to the axial direction, each CNT is in contact with the second dielectric layer and the second support layer;
patterning the stacked layer to form fin structures;
removing the first support layer and the second support layer from the patterned stacked layer; and
forming a source/drain contact layer to contact the exposed CNTs,
wherein the source/drain contact is formed such that, within the cross-section perpendicular to the axial direction, the source/drain contact is in direct contact with only a part of each of the CNTs, and a part of the first or second dielectric layers is disposed between the source/drain contact and the CNTs.