US 12,218,192 B2
Metal substrate structure for a semiconductor power module
David Guillon, Vorderthal (CH); Harald Beyer, Lenzburg (CH); and Roman Ehrbar, Zürich (CH)
Assigned to Hitachi Energy Ltd, Zürich (CH)
Filed by Hitachi Energy Ltd, Zürich (CH)
Filed on Mar. 28, 2022, as Appl. No. 17/705,980.
Claims priority of application No. 21166412 (EP), filed on Mar. 31, 2021.
Prior Publication US 2022/0344456 A1, Oct. 27, 2022
Int. Cl. H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 29/66037 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method for manufacturing a metal substrate structure for a semiconductor power module, the method comprising:
welding a plurality of terminals to a metal top layer; and
after the welding, coupling a dielectric layer between the metal top layer and a metal bottom layer.