US 12,218,191 B1
Semiconductor structure and manufacturing method thereof
Ching-Wen Wang, New Taipei (TW); Jie Li, New Taipei (TW); Ming-Wei Tsai, New Taipei (TW); and Chiao-Shun Chuang, New Taipei (TW)
Assigned to Diodes Incorporated, Plano, TX (US)
Filed by Diodes Incorporated, Plano, TX (US)
Filed on Mar. 13, 2024, as Appl. No. 18/603,854.
Claims priority of application No. 202311543706.8 (CN), filed on Nov. 17, 2023.
Int. Cl. H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/0623 (2013.01) [H01L 21/046 (2013.01); H01L 29/1608 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a silicon carbide layer comprising a unit region and a termination region surrounding the unit region;
a first guard ring structure in the termination region of the silicon carbide layer, the first guard ring structure adjoining a top surface of the silicon carbide layer, and including at least one first guard ring well region;
a second guard ring structure in the silicon carbide layer and below the first guard ring structure, the second guard ring structure including at least one second guard ring well region corresponding to the at least one first guard ring well region in a vertical direction; and
a third guard ring structure in the unit region of the silicon carbide layer, the third guard ring structure being lower than the first guard ring structure in the vertical direction.