US 12,218,189 B2
Semiconductor device and method for manufacturing the same
Hsin-Fu Lin, Hsinchu (TW); Tsung-Hao Yeh, Hsinchu (TW); and Chih-Wei Hung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 24, 2023, as Appl. No. 18/518,797.
Application 18/518,797 is a division of application No. 17/319,457, filed on May 13, 2021, granted, now 11,862,670.
Prior Publication US 2024/0088213 A1, Mar. 14, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0607 (2013.01) [H01L 29/66681 (2013.01); H01L 29/7816 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising:
forming a trench in a semiconductor layer;
forming a dielectric film in the trench;
forming an anti-type doping layer beneath the dielectric film;
forming a drift region in the semiconductor layer in a way that the anti-type doping layer is located between the drift region and the dielectric film, the drift region having a first conductivity type opposite to a second conductivity type of the anti-type doping layer; and
forming a drain area within a portion of the drift region, the drain area having the first type conductivity and having a doping concentration higher than a doping concentration of the drift region,
the anti-type doping layer being disposed to entirely separate the drift region and the drain area from the dielectric film.