US 12,218,188 B2
Deep trench intersections
Binghua Hu, Plano, TX (US); Ye Shao, Plano, TX (US); and John K Arch, Richardson, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Jul. 20, 2021, as Appl. No. 17/380,060.
Application 17/380,060 is a continuation of application No. 16/786,555, filed on Feb. 10, 2020, granted, now 11,101,342.
Prior Publication US 2021/0351269 A1, Nov. 11, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/0603 (2013.01) [H01L 21/308 (2013.01); H01L 21/31053 (2013.01); H01L 21/32055 (2013.01); H01L 21/3212 (2013.01); H01L 21/76232 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a deep trench structure in a semiconductor substrate, the deep trench structure including:
a first linear trench having a first width;
a second linear trench having a second width;
a third linear trench having a third width;
a fourth linear trench having a fourth width;
a trench intersection, wherein the first, second, third and fourth linear trenches extend into the trench intersection, the trench intersection including:
a first connector trench connecting the first linear trench to the second linear trench;
a second connector trench connecting the second linear trench to the third linear trench;
a third connector trench connecting the third linear trench to the fourth linear trench; and
a fourth connector trench connecting the fourth linear trench to the first linear trench; and
a substrate pillar including a material of the semiconductor substrate, wherein:
the substrate pillar is laterally surrounded by the trench intersection;
the first connector trench follows a first arced path with a first inner radius that is 1.4 to 2.0 times a minimum of the first and second widths;
the second connector trench follows a second arced path with a second inner radius that is 1.4 to 2.0 times a minimum of the second and third widths;
the third connector trench follows a third arced path with a third inner radius that is 1.4 to 2.0 times a minimum of the third and fourth widths; and
the fourth connector trench follows a fourth arced path with a fourth inner radius that is 1.4 to 2.0 times a minimum of the fourth and first widths, such that the substrate pillar has an area equal to 30 percent to 120 percent of a square with a side equal to a minimum of the first, second, third, and fourth widths.